BSP121 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: BSP121
الصانع: Philips Semiconductors
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- BSP100
N-channel enhancement mode TrenchMOS transistor - BSP1003
From datasheet system - BSP106
N-channel enhancement mode vertical D-MOS transistor - BSP106T/R
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | SOT-223 - BSP107
N-channel enhancement mode vertical D-MOS transistor - BSP107T/R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 200MA I(D) | SOT-223 - BSP108
N-channel enhancement mode vertical D-MOS transistor - BSP108T/R
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-223 - BSP110
N-channel enhancement mode vertical D-MOS transistor - BSP110T/R
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 325MA I(D) | SOT-223 - BSP120
N-channel enhancement mode vertical D-MOS transistor - BSP120T/R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 250MA I(D) | SOT-223 - BSP121
N-channel enhancement mode vertical D-MOS transistor - BSP121T/R
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 300MA I(D) | SOT-223 - BSP122
N-channel enhancement mode