BFC11 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: BFC11
الصانع: Seme
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- BFC10
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 20.5A I(D) | SOT-227B - BFC11
GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS - BFC12
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 38A I(D) | SOT-227B - BFC13
GENERATION MOSFET - BFC14
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 56A I(D) | SOT-227B - BFC15
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 33A I(D) | SOT-227B - BFC16
GENERATION MOSFET - BFC17
GENERATION MOSFET - BFC18
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS - BFC19
GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS - BFC233820102
Interference Suppression Film Capacitors Radial Potted Type - BFC233820103
Interference Suppression Film Capacitors Radial Potted Type - BFC233820122
Interference Suppression Film Capacitors Radial Potted Type - BFC233820123
Interference Suppression Film Capacitors Radial Potted Type - BFC233820152
Interference Suppression Film Capacitors Radial Potted Type