BF966SB لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: BF966SB
الصانع:
التعبئة:
وصف: 20v30ma103var
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
BF966SB
- BF960
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE - BF961
N??Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode - BF961A
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF961B
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF963
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-103 - BF964
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964S
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF964SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF965
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966S
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF966SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF966SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF967
SILICON PLANAR TRANSISTOR