2SK285507 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SK285507
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SK2850
N-Channel Enhancement Mode Power MOSFET - 2SK2850-01
N-Channel Enhancement Mode Power MOSFET - 2SK2851
Silicon Channel High Speed Power Switching - 2SK2854
CHANNEL TYPE BAND AMPLIFIER APPLICATIONS) - 2SK285407
FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE BAND AMPLIFIER APPLICATION - 2SK2854_07
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION - 2SK2855
CHANNEL TYPE BAND AMPLIFIER APPLICATION) - 2SK285507
FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE BAND AMPLIFIER APPLICATION - 2SK2855_07
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION - 2SK2856
CHANNEL SINGLE GATE MODULATION DOPE TYPE BAND NOISE AMPLIFIER APPLICATIONS) - 2SK2857
Field Effect Transistor - 2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING - 2SK2859
Ultrahigh-Speed Switching Applications