2SC56061 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC56061
الصانع: SILICON
التعبئة:
وصف: 31608
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC5600
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR - 2SC5600-T1
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 100MA I(C) | SOT-416VAR - 2SC5602
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416 - 2SC5602-T1
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416 - 2SC5603
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR - 2SC5603-T1
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR - 2SC5606
SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD - 2SC5606(NE66219)
Discrete - 2SC5606-A
SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608 - 2SC5606-T1
- 2SC5606-T1-A
SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608 - 2SC56061
SILICON TRANSISTOR NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 1608 - 2SC5606_1
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) - 2SC5607
Epitaxial Planar Silicon Transistors - 2SC5609
Silicon epitaxial planer type