2SC5181T1 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC5181T1
الصانع:
التعبئة:
وصف: 3v30ma416
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
2SC5181T1
- 2SC5180
EPITAXIAL SILICON TRANSISTOR SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5180(NE68618)
Discrete - 2SC5180-T1
High fT, high gain transistor - 2SC5180-T2
High fT, high gain transistor - 2SC5180T1
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R - 2SC5181
EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5181(NE68619)
Discrete - 2SC5181-T1
EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5181T1
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416 - 2SC5182
SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR - 2SC5182-T1
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5182-T2
EPITAXIAL SILICON TRANSISTOR MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5182T1
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB - 2SC5183
SURFACE MOUNT SILICON HIGH FREQUENCY TRANSISTOR - 2SC5183-T1
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION