2SC4213_07 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC4213_07
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC4210
EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS) - 2SC4210O
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SC-59 - 2SC4210Y
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SC-59 - 2SC4211
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SC4211-5
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SC4211-6
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SC4211-7
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SC4212
Silicon triple diffusion planar type - 2SC4213
EPITAXIAL TYPE MUTING SWITCHIG APPLICATIONS) - 2SC421307
Silicon Epitaxial Type process) Muting Switching Applications - 2SC4213A
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70 - 2SC4213B
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70 - 2SC4213_07
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications - 2SC4214
PLANAR TYPE TUNER AMPLIFIER APPLICATIONS) - 2SC421407
Silicon Planar Type Tuner Amplifier Applications