2SC330706 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC330706
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC3300
Silicon Power Transistor - 2SC3301
TRANSISTOR | BJT | NPN | 7.5V V(BR)CEO | 80MA I(C) | SOT-89 - 2SC3302
TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATION - 2SC3303
EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS) - 2SC3303O
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3303Y
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-251AA - 2SC3306
SWITCHING TEGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS - 2SC3307
HIGH SPEED HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS - 2SC330706
Silicon Triple Diffused Type High-Speed High-Voltage Switching Applications - 2SC3307_06
Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications - 2SC3308
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR - 2SC3309
SILICON TRIPLE DIFFUSED TYPE