2SA136007 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SA136007
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SA1360
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) - 2SA136007
Audio Frequency Amplifier Applications - 2SA1360O
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-126VAR - 2SA1360Y
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-126VAR - 2SA1360_07
Audio Frequency Amplifier Applications - 2SA1361
2SA1361 - 2SA1362
TRANSISTOR FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) - 2SA136207
Frequency Power Amplifier Applications Power Switching Applications - 2SA1362GR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 800MA I(C) | TO-236 - 2SA1362Y
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 800MA I(C) | TO-236 - 2SA1362_07
Low Frequency Power Amplifier Applications Power Switching Applications - 2SA1363
High Current Drive Applications - 2SA1364
Frequency Power Amplify Applications - 2SA1365
Silicon Epitaxia - 2SA1366
GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON EPITAXIAL TYPE