1N5391GP لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 1N5391GP
الصانع: GE[General Semiconductor]
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 1N5390
Amp. Silicon Rectifier Diodes - 1N5391
AMPS. Silicon Rectifiers - 1N5391-1N5399
Silicon General Rectifiers - 1N5391-T3
1.5A SILICON RECTIFIER - 1N5391-TB
1.5A SILICON RECTIFIER - 1N539104
PLASTIC SILICON RECTIFIER - 1N539106
Standard silicon rectifier diodes - 1N53911
1.5A RECTIFIER - 1N5391B
1.5A, 50V ultra fast recovery rectifier - 1N5391G
TECHNICAL SPECIFICATIONS GLASS PASSIVATED RECTIFIER - 1N5391G-1N5399G
Glass General Rectifiers - 1N5391G-T
1.5A GLASS PASSIVATED RECTIFIER - 1N5391G1
1.5A GLASS PASSIVATED RECTIFIER - 1N5391GP
GLASS PASSIVATED JUNCTION RECTIFIER - 1N5391GTHRU1N5399G
GENERAL PURPOSE PLASTIC RECTIFIER