BF998WR لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: BF998WR
الصانع: Philips Semiconductors
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- BF990A
N-channel dual-gate MOS-FET - BF990AT/R
TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 30MA I(D) | SOT-143 - BF991
N-channel dual-gate MOS-FET - BF9912
From datasheet system - BF991T/R
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(D) | SOT-143 - BF992
Silicon N-channel dual gate MOS-FET - BF992/R
Silicon N-Channel Dual-Gate MOS-FETs - BF9923
From datasheet system - BF992T/R
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 40MA I(D) | SOT-143 - BF993
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 - BF994
Silicon Channel MOSFET Tetrode applications, especially input mixer stages with wide tuning range, e.g. CATV tuners) - BF994S
N-channel dual-gate MOS-FET - BF994S2
From datasheet system - BF994SA
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF994SB
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode