BD616LV4017EIP70 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: BD616LV4017EIP70
الصانع: Brilliance Semiconductor
التعبئة:
وصف: 256k
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- BD616LV4017AC-55
Very Power/Voltage CMOS SRAM 256K - BD616LV4017AC-70
Very Power/Voltage CMOS SRAM 256K - BD616LV4017ACG55
Very Power/Voltage CMOS SRAM 256K - BD616LV4017ACG70
Very Power/Voltage CMOS SRAM 256K - BD616LV4017ACP55
Very Power/Voltage CMOS SRAM 256K - BD616LV4017ACP70
Very Power/Voltage CMOS SRAM 256K - BD616LV4017AI-55
Very Power/Voltage CMOS SRAM 256K - BD616LV4017AI-70
Very Low Power/Voltage CMOS SRAM 256K X 16 bit - BD616LV4017AIG55
Very Low Power/Voltage CMOS SRAM 256K X 16 bit - BD616LV4017AIG70
Very Low Power/Voltage CMOS SRAM 256K X 16 bit - BD616LV4017AIP55
Very Low Power/Voltage CMOS SRAM 256K X 16 bit - BD616LV4017AIP70
Very Power/Voltage CMOS SRAM 256K - BD616LV4017DC-55
Very Power/Voltage CMOS SRAM 256K - BD616LV4017DC-70
Very Power/Voltage CMOS SRAM 256K - BD616LV4017DCG55
Very Power/Voltage CMOS SRAM 256K