3N60 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 3N60
الصانع: UTC[Unisonic Technologies]
التعبئة:
وصف: 600650
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 3N100E
TMOS POWER AMPERES 1000 VOLTS - 3N128
Silicon Transistor - 3N142
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR - 3N143
Silicon Transistor - 3N152
PWM/VFM Step-down DC/DC Converter - 3N153
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR - 3N154
SILICON TRANSISTOR - 3N155
TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72 - 3N158
TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72 - 3N159
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72 - 3N161
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH - 3N163
P-CHANNEL ENHANCEMENT MODE - 3N163-4
P-CHANNEL ENHANCEMENT MODE - 3N164
P-CHANNEL ENHANCEMENT MODE - 3N165
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier