2SC5376_07 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC5376_07
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC537
TRANSISTOR | BJT | NPN | 100MA I(C) | TO-106VAR - 2SC5370
SILICON EPITAXIAL PLANAR TRANSISTOR(EMERGENCY LIGHTING INVERTER GENERAL PURPOSE) - 2SC5374
Band High-Frequency Applications - 2SC5374A
Epitaxial Planar Silicon Transistor Band High-Frequency Amplifier Applications - 2SC5375
Epitaxial Planar Silicon Transistors - 2SC5375A
Epitaxial Planar Silicon Transistor Band High-Frequency Amplifier Applications - 2SC5376
EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER MUTING SWITCHING APPLICATIONS) - 2SC537607
Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications - 2SC5376A
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 - 2SC5376B
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 - 2SC5376F
Transistor Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications Muting Switching Applications - 2SC5376F07
Silicon Epitaxial Type Audio Frequency General Purpose Amplifier Applications - 2SC5376FA
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR - 2SC5376FB
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 400MA I(C) | SOT-416VAR - 2SC5376F_07
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications