2SC5196_06 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC5196_06
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC5190
Silicon epitaxial planer type(For low-voltage high-frequency amplification) - 2SC5191
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR - 2SC5191(NE68833)
Discrete - 2SC5191-T1
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR - 2SC5191-T2
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR - 2SC5192
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD - 2SC5192(NE68839)
Discrete - 2SC5192-T1
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD - 2SC5192-T2
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD - 2SC5192R
Low-voltage drive, high-frequency transistor - 2SC5192R-T1
Low-voltage drive, high-frequency transistor - 2SC5192R-T2
Low-voltage drive, high-frequency transistor - 2SC5193
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD - 2SC5193(NE68830)
Discrete - 2SC5193-T1
MICROWAVE NOISE AMPLIFIER SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD