2SC509707 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC509707
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC5090
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS) - 2SC509007
Silicon Epitaxial Planar Type - 2SC5090O
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SC-70 - 2SC5090R
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SC-70 - 2SC5090_07
Silicon NPN Epitaxial Planar Type - 2SC5091
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS) - 2SC5091FO
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 40MA I(C) | SOT-416VAR - 2SC5091FR
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 40MA I(C) | SOT-416VAR - 2SC5091FT
EPITAXIAL PLANAR TYPE (VHF~UHF BAND NOISE AMPLIFIER APPLICATIONS) - 2SC5091FT07
Silicon Epitaxial Planar Type VHF~UHF Band Noise Amplifier Applications - 2SC5091FTO
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 20MA I(C) | SOT-416 - 2SC5091FTR
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 20MA I(C) | SOT-416 - 2SC5091FT_07
Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications - 2SC5091O
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SOT-416 - 2SC5091R
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 20MA I(C) | SOT-416