2SC4180W لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC4180W
الصانع: Galaxy Semi-Conductor Holdings Limited
التعبئة:
وصف: 3silicon
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC410
POWER TRANSISTOR - 2SC4100
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23VAR - 2SC4100M
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23VAR - 2SC4100N
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23VAR - 2SC4100P
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23VAR - 2SC4100Q
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23VAR - 2SC4102
High-voltage Amplifier Transistor - 2SC41021
High-voltage Amplifier Transistor (120V, 50mA) - 2SC4102E
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-70 - 2SC4102R
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-70 - 2SC4102S
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-70 - 2SC4102W
Silicon Epitaxial Planar Transistor - 2SC4102_1
High-voltage Amplifier Transistor (120V, 50mA) - 2SC4103
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | SOT-23VAR - 2SC4103M
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | SOT-23VAR