2SC3669_04 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SC3669_04
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SC3660
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 24A I(C) | RFMOD - 2SC3660A
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 24A I(C) | RFMOD - 2SC3661
High-hFE, Low-Frequency General-Purpose Applications??????????????? - 2SC3663
Epitaxial Silicon Transistor - 2SC3663-L
For amplify high frequency and low noise. - 2SC3663-T1B
For amplify high frequency and low noise. - 2SC3663-T2B
For amplify high frequency and low noise. - 2SC3664
High-Voltage Switching Applications??? - 2SC3665
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS - 2SC3665O
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SC-71 - 2SC3665Y
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 800MA I(C) | SC-71 - 2SC3666
EPITAXIAL TYPE (AUDIO POWER APLIFIER APPLICATIONS) - 2SC3666O
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | SC-71 - 2SC3666Y
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | SC-71 - 2SC3668
Transistor Silicon Epitaxial Type process) Power Amplifier Applications Power Switching Applications