2SB145706 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SB145706
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SB1450
50V/7A Switching Applications - 2SB1450Q
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1450R
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1450S
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1451
80V/5A Switching Applications - 2SB1451Q
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-252VAR - 2SB1451R
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-252VAR - 2SB1451S
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-252VAR - 2SB1452
80V/7A Switching Applications - 2SB1452Q
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1452R
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1452S
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-252VAR - 2SB1453
epitaxial silicon power transistor - 2SB1454
PNP/NPN Epitaxial Planar Silicon Transistors - 2SB1454Q
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220VAR