2SB1110D لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SB1110D
الصانع:
التعبئة:
وصف: 200v100ma126
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
2SB1110D
- 2SB1101
FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 - 2SB11012SB1102
Silicon Triple Diffused - 2SB1102
Silicon Power Transistors - 2SB1103
Silicon Triple Diffused - 2SB1104
Silicon PNP Triple Diffused(???????NP????? - 2SB1105
Silicon Power Transistors - 2SB1106
Silicon Power Transistors - 2SB1108
Medium Speed Switching Complementary Pair with 2SD1608 - 2SB1109
SILICON EPITAXIAL FREQUENCY HIGH VOLTAGE AMPLIFIER) - 2SB1109B
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1109C
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1109D
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1110
SILICON EPITAXIAL FREQUENCY HIGH VOLTAGE AMPLIFIER) - 2SB1110B
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 - 2SB1110C
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126