2SA1162_03 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2SA1162_03
الصانع: Toshiba Semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2SA1160
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) - 2SA116007
Strobe Flash Applications Medium Power Amplifier Applications - 2SA1160A
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 2A I(C) | TO-92 - 2SA1160B
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 2A I(C) | TO-92 - 2SA1160C
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 2A I(C) | TO-92 - 2SA1160_07
Strobe Flash Applications Medium Power Amplifier Applications - 2SA1162
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) - 2SA116203
Audio Frequency General Purpose Amplifier Applications - 2SA116207
Audio Frequency General Purpose Amplifier Applications - 2SA1162GR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 - 2SA1162GT1
General Purpose Amplifier Transistors - 2SA1162GT1/D
General Purpose Amplifier Transistors - 2SA1162O
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 - 2SA1162Y
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 - 2SA1162YT1
General Purpose Amplifier Transistors