2N6519 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2N6519
الصانع: Samsung semiconductor
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2N650
alloy-junction germanium transistors - 2N6500
HIGH SPEED EPITAXIAL COLLECTOR SILICON PLANAR TRANSISTORS - 2N6502
Dual Transistors - 2N6504
Silicon Controlled Rectifiers - 2N6504-D
Reverse Blocking Thyristors - 2N6504/D
Silicon Controlled Rectifiers - 2N650406
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs AMPERES thru VOLTS - 2N6504G
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs AMPERES thru VOLTS - 2N6504_06
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS - 2N6505
Silicon Controlled Rectifiers - 2N6505G
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs AMPERES thru VOLTS - 2N6505T
Silicon Controlled Rectifiers - 2N6505TG
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs AMPERES thru VOLTS - 2N6506
Thyristor, 25 amperes, 200 volt - 2N6507
Silicon Controlled Rectifiers