2N5886G لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2N5886G
الصانع: ONSEMI[ON Semiconductor]
التعبئة:
وصف: 8722
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2N580
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 400MA I(C) | TO-5 - 2N5804
Bipolar Device Hermetically sealed Metal Package - 2N5805
Silicon NPN Power Transistors - 2N581
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5 - 2N5810
Small Signal Transistors TO-92 Case (Continued) - 2N5811
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5812
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5813
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5814
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5815
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5816
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5817
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5818
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N5819
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTOR - 2N582
TRANSISTOR | BJT | PNP | 14V V(BR)CEO | 100MA I(C) | TO-5