2N5655G لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2N5655G
الصانع: Semiconductor
التعبئة:
وصف: 8722
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
- 2N560
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29 - 2N5600
Silicon Power Transistors - 2N5601
Bipolar Device Hermetically sealed TO66 Metal Package - 2N5602
Bipolar Device Hermetically sealed TO66 Metal Package - 2N5603
Bipolar Device Hermetically sealed TO66 Metal Package. - 2N5604
Bipolar Device Hermetically sealed TO66 Metal Package - 2N5605
Bipolar Device Hermetically sealed TO66 Metal Package - 2N5606
Bipolar Device Hermetically sealed Metal Package. - 2N5607
Bipolar Device Hermetically sealed TO66 Metal Package. - 2N5608
Bipolar Device Hermetically sealed TO66 Metal Package - 2N5609
Silicon Transistors - 2N561
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3 - 2N5610
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. - 2N5611
Bipolar Device Hermetically sealed to66 Metal Package. - 2N5611A
Silicon PNP Power Transistors