2N3226 لجنة التخطيط الاستراتيجي ، والدوائر ، وظيفة
الجزء الاسم: 2N3226
الصانع: Inchange Semiconductor Company Limited
التعبئة:
وصف:
دبابيس:
درجة الحرارة: دقيقة °C | ماكس °C
حجم: KB
2N3226
- 2N320
alloy-junction germanium transistors - 2N3202
Bipolar Device Hermetically sealed TO39 Metal Package - 2N3203
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-5 - 2N3204
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-5 - 2N3209
Leaded Small Signal Transistor General Purpose - 2N3209CSM
HIGH SPEED, SWITCHING TRANSISTOR HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE HIGH RELIABILITY APPLICATIONS - 2N3209DCSM
DUAL HIGH SPEED, MEDIUM POWER GENERAL PURPOSE TRANSISTOR HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE - 2N3209L
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-18 - 2N321
alloy-junction germanium transistors - 2N3210
Leaded Small Signal Transistor General Purpose - 2N3211
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | TO-18 - 2N3212
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37 - 2N3213
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-37 - 2N3214
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-37 - 2N3215
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-37